摘要
采用超高真空电子束蒸发设备和快速热退火工艺制备GaAs／Pd／AuGe／Ag／An多层结构和测量比接触电阻车所需的传输线模型。研究了比接触电阻率与退火温度和时间关系，400～500℃之间退火的欧姆接触的比接触电阻车约为10（－6）Ωem2。接触层表面光滑、界面平整。利用俄歇电子谱（AES）、二次离子质谱（SIMS）、X射线衍射（XRD）和扫描电镜（SEM）研究了欧姆接触的微观结构和形成机理。
Pd/AuGe/Ag/Au Ohmic contact to n-GaAs is formed by using eectron beam evaporation and the rapid thermal annealing methed. The dependence of specific contact resistivity on rapid thermal annealing temperature is investigated. The results show that the metallization on GaAs displays good electrical properties with a contact resistivity of (2~ 5 ) X10(-6)Ωcm2 The surface and interface morphologies of the contact are excellent. The microstructure and formation mechanism of the Ohmic contact are investigated using AES,SIMS,XRD and SEM.
出处
《真空科学与技术》
CSCD
北大核心
1997年第1期51-55,共5页
Vacuum Science and Technology
关键词
欧姆接触
砷化镓
热退火
俄歇电子谱
Ohmic contact, GaAs, Secondary ion mass spectroscopy, Auger electron spectroscopy
