基于BiCMOS工艺的Bipolar VCO和CMOS VCO性能对比

Performance Comparison of Bipolar Vs CMOS VCO in BiCMOS Technology

阐述了基于BiCMOS工艺的全集成LC调谐压控振荡器的基本原理.为了比较Bipolar VCO和CMOS VCO的性能,他们很好地设计在同一块芯片上.在560 M的中心频率上,CMOS VCO无论在功耗,还是在相位噪声方面都要优于Bipolar VCO,他们的电流消耗分别为3.9 mA和5.9 mA,两种VCO都是基于0.6μm BiCMOS工艺而仿真和测量的.

The fundamental principle of fully integrated LC-tunned VCO（ Voltage Controlled Oscillator）in BiCMOS process is illustrated in this paper. To compare the performance, both Bipolar VCO and CMOS VCO are designed in same chip. For 560 MHz VCO, CMOS VCO has better performance than Bipolar VCO in power consumption, and in phase noise. The current consumption of BJT VCO and CMOS VCO are 3.9 mA and 5.9 mA espectively. Both VCO stimulated and measured by using 0.6μm BiCMOS process.