TiO_2薄膜氧敏特性研究

Characteristics of Oxygen Sensitivity of TiO_2 Thin Films

金属氧化物(如ZrO_2,TiO_2等)随氧分压不同,有改变电导率这一性质而被广泛地用来制作氧敏传感器.传统的传感器大多是体材料或厚膜材料。工作时需加高温。本文描述的是TiO_2薄膜材料与Pt薄膜形成的肖特基势垒高度随氧分压不同而改变的氧敏现象,测定了该肖特基二极管的氧敏特性,并讨论了它的敏感机理。

The ability of metal oxides (such as zirconia, titania, etc. ) to change their electric conductivity on variations of the partial pressure of oxygen has been utilized for development of oxygen sensors. Tranditional sensors are mostly made from bulk or thick films materials, which need high temperature when working. The objective of this paper is to describe the change of the height of Schottky barriers at the surface of titania when the partial pressure of oxygen changed. The properties of this Schottky diode was measured and the mechanism was discussed.