新的PIN型0.95μm光探测器设计

A New PIN Type Photodetector Operating at 0. 95μm

提出并设计了一种新的PIN型0.95μm光探测器。它的I层是Ge_0.3Si_0.7(8nm)/Si(12 nm),共50个周期。上、下缓冲层厚各为0.1μm,n^+-Si(10^(20)Cm^(-3)厚约0.5μm,衬底为〈100〉P^+-Si,器件面积为4mm^2。这种探测器一旦实现,它对0.95μm光的灵敏度比硅PIN型探测器高得多,可用于火灾报警等场合。

A new PIN type photodetector operating at 0. 95 μm have been designed. Its undoped layer is Ge0.3Si0.7(8 nm)/Si(12 nm), and the total periodic number is 50. The thickness of buffer layer is 0. 1 μm. The thickness of n+(1020 cm-3)-Si is 0. 5 μm. The substrate is <100> p+-Si. The area of device is 4 mm2. This new type photodetector sensitivity is higher than the Si PIN type photodetector. It may use in fire-alarm.