HIT太阳电池中ITO薄膜的结构和光电性能

STRUCTURAL AND PHOTOELECTRIC PROPERTY OF ITO THIN FILMS FOR HIT SOLAR CELLS

采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜,并将其应用于HIT太阳电池.分析了薄膜的结构、光电特性.结果表明,在120W时制备的薄膜很好地兼顾了电阻率和光透过率,其电阻率为3.48×10^-4Ω·cm、在350～800 nm波段的平均光透过率为87.1%,将其应用于HIT太阳电池上,电池的转换效率可达13.38%.

ITO thin films were prepared by radio-frequency magnetron sputtering technique at different sputtering power, and applied to HIT solar cells. Mierostruetures, electrical and optical properties of these films were analyzed. The results displayed that the film deposited at sputtering power of 120W has a good compromise between the resistivity and optical transmittance, the resistivity of the sample was 3.48 × 10^-4Ω·cm, and the average transmittance is 87.1% in the wavelength range of 350 ×380nm. 13.38% conversion efficiency could be obtained on the HIT solar cell using the optimized ITO thin film.