摘要
采用真空熔炼和热压烧结法制备了B含量为0.3%～0.72%的P型Si0.8Ge0.2固溶体合金,对样品进行了物相结构分析和微观形貌表征,并研究了掺B量对合金热电性能的影响。结果表明:随着B掺杂量的增加,电导率σ增大,塞贝克系数α减小,功率因子α2σ在B掺入量约为0.6%时达到最大值。
P-type Si0.8Ge0.2 alloys doped with 0.3%-0.72 % B have been synthesized by melting in vacuum and hot pressing. Phase structure and micromorphology, as well as the B dependence of thermoelectric parameter at room temperature were observed. The results show that the electrical conductivity increases with the increase of B contents, whereas the Seebeck coefficient decreases. The power factor gains a maximum when the B contents are 0.6 %.
出处
《装备制造技术》
2007年第4期16-17,32,共3页
Equipment Manufacturing Technology
关键词
SIGE合金
热电材料
超高压
SiGe alloys
thermoelectric materials
hot pressing
