摘要
采用脉冲准分子激光工艺,在p型Si(100)单晶基片上,成功地淀积了BIT、PZT/BIT和BIT/PZT/BIT等多层结构的铁电薄膜;采用低频阻抗分析仪,分析了它们的C-V特性曲线的记忆窗口,讨论了记忆窗口与频率的关系,记忆窗口与多层结构的关系。结果表明,三层结构铁电薄膜的C-V特性的记忆窗口优于双层和单层结构的铁电薄膜。
The ferroelectric thin films BIT,PZT/BIT and BIT/PZT/BIT were deposited successfully on p-Si(100)using pulsed excimer laser. The memory windows of C-V characteristics of these ferroelectric thin films were analyzed using LF impedance analyzer. Dependence of the memory windows on frequency and multilayer structures were discussed. The experimental results indicate that the memory windows of C-V characteristics of trilayer ferroelectric thin films are superior to those of one layer and two-layers structure.
出处
《压电与声光》
CSCD
北大核心
1997年第2期112-115,138,共5页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金
激光技术国家实验室开放基金
关键词
BIT
PZT
BIT
铁电薄膜
记忆特性
C-V特性
BIT/PZT/BIT multilayer ferroelectric thin films
memory characteristics
C-V characteristics
PLD method
