摘要
文中对压力传感器中用扩散法和离子注入法制作的电阻的温度系数进行了研究。实验结果表明,同扩散法制备的电阻相比,采用离子注入法制备的电阻,其温度系数更小。
The temperature coefficient of resistances prepared by diffusion and implantation method is studied. Experimental results indicate that, in comparison with resistances made by diffusion, resistances prepared by implantation have a lower temperature coefficient and the resistance values can be controlled precisely.
出处
《电子科技》
1997年第2期35-37,共3页
Electronic Science and Technology
关键词
压力传感器
温度系数
离子注入
扩散
pressure transducer, temperature coefficient, implantation, diffusion