摘要
Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre-coated(111) silicon substrates with chemical vapor deposition(CVD) technique. By evaporating pure Ga powder in the H2O atmosphere under ambient pressure the large-scale preparation of β-Ga2O3 with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3 nano-structures are characterized by means of scanning electron microscope(SEM), X-ray diffraction(XRD), selected area electron diffraction(SAED) and transmission electron microscope(TEM). Raman spectrum reveals the typical vibration modes of Ga2O3. The vibration mode shifts corresponding to Ga2O3 nano-structures are not found. Two distinguish photoluminescence(PL) emissions are found at about 399 nm and 469 nm owing to the VO-VGa excitation and VO-VGa-O excitation, respectively. The growth mechanisms of Ga2O3 nanowires and nanosheets are discussed with vapor-liquid-solid(VLS) and vapor-solid(VS) mechanisms.
Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre coated（111） silicon substrates with chemical vapor deposition（CVD） technique. By evaporating pure Ga powder in the H2O atmosphere under ambient pressure the large-scale preparation of β-Ga2O3 with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3 nano-structures are characterized by means of scanning electron microscope（SEM）, X-ray diffraction（XRD）, selected area electron diffraction （SAED） and transmission electron microscope（TEM）. Raman spectrum reveals the typical vibration modes of Ga2O3 The vibration mode shifts corresponding to Ga2O3 nano-structures are not found. Two distinguish photoluminescence（PL） emissions are found at about 399 nm and 469 nm owing to the VO-VGa excitation and VO-VGaO excitation, respectively. The growth mechanisms of Ga2O3 nanowires and nanosheets are discussed with vapor liquid-solid（VLS） and vapor-solid（VS） mechanisms.
