摘要
报道了在钼衬底上利用微波等离子体化学气相淀积技术制备金刚石镶嵌非晶碳膜,在硅衬底上用脉冲激光淀积技术(pulsedLaserDeposition)制备类金刚石薄膜,并对其场发射特性和机理进行了进一步的研究。用金刚石镶嵌非晶碳膜作阴极,在2.1V/μm的场强下便有电子发射,最大发射电流密度为4mA/cm2。实验表明,金刚石镶嵌非晶碳膜是制做场效发射冷阴极的合适材料。
:Diamond-carbon thin films deposited on molybdenum substrates were prepared using microwave plasma-enhanced chemical vapor deposition (MPCVD). The diamond-like films were prepared by pulsed laser deposition (PLD). A current density from diamond-carbon films was 4 mA/cm' and turn-on field of 2. l V/pm was obtained. The diamond-carbon films will be good for cold electron field emitters.
出处
《光电子技术》
CAS
1997年第1期24-27,共4页
Optoelectronic Technology
基金
国家863计划资助
关键词
金刚石
类金刚石薄膜
场致电子发射
diamond-carbon thin film,field electron emission, diamond-like films