衬底温度和退火温度对磁控溅射TiNi合金薄膜组织结构的影响

Effection of Substrate Temperature and Annealing Temperature on the Organization Structure of TiNi Alloy Films Prepared by Magnetron Sputtering

通过扫描电镜(SEM)、X射线衍射仪(XRD)、透射电子显微镜(TEM)等测试方法研究了不同的衬底加热温度和不同晶化退火温度对磁控溅射法制备的TiNi薄膜组织结构的影响。结果表明:加热衬底可以降低薄膜的晶化温度,通过控制加热温度可以控制晶粒的大小,同时可有效抑制析出相的产生;非晶薄膜在晶化的同时伴随Ti3Ni4相的析出,随晶化温度的升高析出相在长大的同时数量也明显增多。

Effects of different substrate temperature and crystallization annealing temperature on TiNi film＇s organization structure are studied by scanning electron microscopy （SEM）,X-ray diffraction （XRD） and transmission electron microscopy （TEM）. The result shows that crystallization temperature of the film can be lowered by substrate heating, and grain size can be controlled by controlling heat temperature, and at the same time the produce of precipitated phase Can be inhibited. Amorphous film＇s crystalling is produced with precipitation of the Ti3Ni4 phase. As the crystallization temperature rises, the precipitated phase grows with its quantity increasing obviously.