EXO3晶振与KSS晶振在高过载下的失效特性分析

Failure mechanism of crystal oscillator EXO3 and KSS under high shock

为了研究芯片抗高过载能力,本实验选取两种典型晶振芯片:EXO3、KSS,利用Hopkinson杆对其进行高g值冲击,以一维应力波理论估计芯片受到的加速度,并用运力学模型对其内部结构进行分析。结果表明:晶振的内部结构直接影响它的抗冲击性能;与应力波传播方向平行放置的晶振抗冲击性能要高于与应力波传播方向垂直的晶振。

In order to determine the over-loading resistibility of the microchip, the experiments had been performed using Hopkinson bar, testing two types of crystal oscillator： EXO3 and KSS. The acceleration was estimated according to the theory of one-dimensional stress wave and the internal structure was analyzed under mechanics model. The research shows that： 1. The internal structure of oscillator effects the shock-resistibility directly. 2. The shock-resistibility of oscillator paralleling the direction of stress wave is stronger than those which are vertical on the direction of stress wave.