摘要
研究了直接采用ICP-MS的等离子体屏蔽技术(PS)测定高纯氢氧化钽中Mg,Fe,Cr,Zn 4种杂质元素的分析方法。实验了的仪器工作参数,用Co做内标补偿基体效应,方法的回收率在80%～130%之间,相对标准偏差均低于18.40%,检出限为0.01ng/ml～0.56ng/ml,测定结果与ICP-AES测定结果基本一致。
In this paper, a method has been studied to determine trace Mg, Fe, Cr and Zn in Tantalum hydroxide by Plasma Screen Technology of ICP-MS. Instrumental parameter has been optimized by experiment, and calibrated matrix interferences by internal standard Co. The method showed the recovery was between 80%-130%. The relative standard deviation was less than 18.40% and the detection limit of 0.01 ng/mL-0.56 ng/mL with good accuracy and high sensitivity. Results of test are the same that ICP-AES method.
出处
《稀有金属快报》
CSCD
2007年第5期40-42,共3页
Rare Metals Letters
