摘要
The electron states confined in wurtzite InxGa1-xN/GaN strained quantum dots （QDs） have been investigated in the effective -mass approximation by solving the Schrtdinger equation, in which parabolic confined potential and strong built-in electric field effect （due to the piezoelectricity and spontaneous polarization） have been taken into account. The real part Rex^（3）（0,0,ω） and the imaginary part Imx^（3）（0,0,ω） of the third-order susceptibil- ity describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore, the study shows Rex^（3）（0,0,ω） and Imx^（3）（0,0,ω） increase under resonant conditions with the QDs＇ radius and height increase, and the same results occur when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase.
The electron states confined in wurtzite InxGa1-xN/GaN strained quantum dots （QDs） have been investigated in the effective -mass approximation by solving the Schrtdinger equation, in which parabolic confined potential and strong built-in electric field effect （due to the piezoelectricity and spontaneous polarization） have been taken into account. The real part Rex^（3）（0,0,ω） and the imaginary part Imx^（3）（0,0,ω） of the third-order susceptibil- ity describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore, the study shows Rex^（3）（0,0,ω） and Imx^（3）（0,0,ω） increase under resonant conditions with the QDs＇ radius and height increase, and the same results occur when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase.
基金
Supported by the National Natural Science Foundation of China (10534030)
