摘要
以TPD为空穴传输层,Alq3为发光层兼做电子传输层,用真空蒸镀方法制备了双层结构ITO/TPD/Alq3/Mg∶Ag器件,并系统地研究了发光层厚度对器件发光性能的影响。通过固定TPD厚度为40 nm,Alq3层厚度x分别为20,30,40,50,60和70 nm,共制备了六种结构的器件。结果表明,器件电流随着x的增大而减小,启亮电压随着x的增加而增大,而器件亮度和流明效率随着x的增大先增大再减小;x=40 nm的器件在15 V电压下具有最大亮度值13 750 cd/m2,在5 V电压下具有最大流明效率值0.862 lm/W。
Double layer organic light-emitting consisting of TPD and Alq3 layer as hole transport layer （HTL） and electron transport and emitting layer（ETL and EML）, respectively, were systematically studied. The device was fabricated by conventional vacuum deposition method. Influence of thickness of Alq3 layer on indium tin oxide （ITO）/ TPD （40 nm）/ Alq3 （x） （x is the film thickness, which are 20, 30, 40, 50, 60, 70 nm）/ Mg ： Ag（300 nm） and the performance of devices was investigated. Result shows that current density decreases with the increase of x,while turn-on voltage is proportional to x. It proved that device with x=40 nm has the highest luminance of 13 750 cd/m^2 at 15 V and the maximum efficiency of 0. 862 lm/W at 5 V.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第2期195-197,244,共4页
Semiconductor Optoelectronics
基金
电子科技大学中青年学术带头人资助项目
