中频反应磁控溅射沉积Al_2O_3薄膜中迟滞回线的研究

On the hysteresis loop in deposition of Al_2O_3 films prepared by medium-frequentcy reactive magnetron sputtering

采用中频磁控反应溅射工艺进行氧化铝薄膜的沉积实验,对该工艺过程中溅射电压和沉积速率与氧流量的“迟滞回线”现象进行了研究。通过对实验现象的分析讨论,解释了薄膜沉积速率变化的原因。

Aluminum oxides films were grown by medium-frequency reactive magnetron sputtering. Hysteresis loop observed in the relationship between the sputtering voltage （or the film deposition rate） and the oxygen flow rate was studied. Influence of oxygen partial pressure on oxide layer in the sputtered areas on target surfaces may account for the change in film deposition rate