硅微通道板电子倍增器的研制

The developments of Si microchannel plates for electron multiplying

阐述了新一代硅微通道板的主要性能。采用定向离子深度刻蚀技术在2和4硅片上刻蚀了四组不同直径的硅微通道板微孔阵列,分别采用PECVD技术和液体化学沉积两种方法制作了硅微通道板的连续打拿极,从而探索了研制新一代硅微通道板的途径。利用紫外光电法测试了硅微通道板的增益和增益均匀性。实验结果表明,如果进一步改进制备工艺,硅微通道板可以实现较传统微通道板更高的增益和更好的增益均匀性。

Silicon microchannel arrays with the diameters of 8μm, 16μm, 25μm, and 40μm were fabricated on Silicon slices of 2 inch and 4 inch with directional plasma etch. And continuous dynodes were prepared with PECVD and liquid MgO deposition respectively. The new approach for developing Si microchannel plates （MCP） was investigated. The gain and gain unifo mity of samples were tested with UV optoelectronic system. The experimental results show that it is possible to develop a Si microchannel plates of higher gain and better gain uniformity compared with standard glass MCPs.