掺杂量对ZnO∶Tb复合薄膜的形貌和光学性能的影响

The Influence of Annealing Temperature on the Structure and Morphology of ZnO∶Tb Thin Film

采用的两步法——先溅射成膜,后退火处理的工艺成功制备了ZnO:Tb复合薄膜,结合XRD、SEM、PL等手段研究了掺杂量对薄膜结构和形貌的影响.发现掺杂量为4.16%时,ZnO:Tb薄膜表面形成新奇T-A-ZnO结构以及不同直径和长度的螺纹状纳米棒;同时出现378 nm和387 nm两个较强的紫外发光峰,以及中心波长位于515 nm的强绿光峰.

A two steps route to obtain 3D ZnO structures by annealing treatment of the sputtered ZnO：Tb thin films was report. The influence of dopant content on the structure and morphology of ZnO：Tb thin films on Si substrate was investigated. And we found that a special tetrapod-aiguille-ZnO structure （T-A-ZnO）together with screw-like nanorods has been formed on ZnO：Tb thin films with. 4.16 % Tb dopant.. The PL spectrum of the film with the special structure is featured with two UV emission peaks （at 378 and 387 nm）and a strong green emission band（centered at 515 nm）.