纳米SiO_2对原位分散聚合制备导电聚苯胺薄膜结构与性能的影响

Effects of Nano-silicon Dioxide on the Structure and Performance of Transparent and Conducting Polyaniline Films Prepared by In-situ Dispersion Polymerization

在苯胺的化学氧化体系中,采用无机纳米微粒二氧化硅作为空间稳定剂,在玻璃基体表面直接制备了透明导电的聚苯胺薄膜,并与水溶性高分子聚乙烯吡咯烷酮(PVP)做稳定剂进行比较。采用SEM、紫外光谱、红外光谱和四探针电导率仪对薄膜的表观形貌、厚度、化学结构和电导率进行了表征。结果表明:稳定剂的存在有效抑制了溶液中宏观沉淀的生成,制得的薄膜表面光滑致密;与水溶性高分子聚乙烯吡咯烷酮(PVP)为稳定剂的情况相比较,纳米SiO2做稳定剂条件下,整个反应体系诱导期相对延长,反应速率相对缓慢,薄膜的生长速度也相对缓慢;薄膜的饱和厚度达到200nm左右,高于聚乙烯吡咯烷酮(PVP)做稳定剂的情况;所得薄膜的电导率要相对低一些,仍属于半导体范围;红外光谱分析发现制备的聚苯胺薄膜中无稳定剂存在,说明稳定剂未参与薄膜的生长聚合。

Conducting and transparent polyaniline （PANI） films were prepared on glass substrate in the oxidative system of aniline by in-situ dispersion polymerization and inorganic microparticles-silicon dioxide and water-soluble polymer polyvinyl-pyrrolidone （PVP）, as stabilizer. The morphology, thickness, chemical structure and conductivity of the PANI films were charactered by SEM, UV, FTIR and four-probe method. It was proved that the surface of films was smooth and adhered with some sphere colloidal particles because of a stabilizer preventing the macroscopic precipitation of PANI. The thickness and conductivity of films varied with different kinds of stabilizers. The FTIR spectroscopy result showed the absence of stabilizer and proved that the stabilizer did not participate in the growth of films.