摘要
概述了用于45nm节点的各种光刻技术发展现状及技术路线,结合国际半导体技术发展指南(ITRS)和各公司最新宣布的研究成果,探讨了各种光刻技术用于32nm节点的可能性。
The current status and lithography roadmap of ITRS 2006 is reviewed in this paper, The trends of lithography Techniques for the node of 32nm has been approached with the roadmap of ITRS and the newest results of research announced in SPIE 2006 Optical Microlithography symposium and IEDM 2007.
出处
《电子工业专用设备》
2007年第4期8-16,共9页
Equipment for Electronic Products Manufacturing
关键词
浸液式光刻
折射率
双重曝光
极紫外光刻
纳米压印光刻
曝光设备
Immersion lithography
Re,active Index
EUVL
Polarization Technology
Dual Exposure
Imprint
Exposure Tool
