193 nm ArF浸没式光刻技术PK EUV光刻技术

193 nm ArF Immersion Lithography Technicque PK EUV Lithography Technicque

2006年11月英特尔决定采用193nm ArF浸没式光刻技术研发32nm工艺。2007年2月IBM决定在22nm节点上抛弃EUV光刻技术,采用193nm ArF浸没式光刻技术。对于32nm/22nm工艺,193nm ArF浸没式光刻技术优于EUV光刻技术,并将成为主流光刻技术。

The 32 nm technology is developed by Intel using 193 nm ArF immersion lithography technicque in November 2006. The 22 nm technology is researched by IBM with 193 nm ArF immersion lithography technicque in February 2007, giving up EUV lithography. In the 32 nm/22 nm technology, the 193 nm ArF immersion lithography is main current lithography technicque, surpassing the EUV lithography.