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扩展苯基衍生物分子器件的电子输运的理论研究 被引量:1

Theoretical Study on the Electron Transport of Oligophenylene Derivatives Molecular Devices
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摘要 通过结合杂化密度泛函和前线轨道理论与弹性散射格林函数方法研究了三种苯基衍生物分子器件的电子输运性质.基于杂化密度泛函方法计算扩展分子电子结构的基础上,计算了苯基衍生物三分子结的输运性质.计算结果表明,在低偏压下,电流与电压呈线性变化;分子结的电阻的对数与苯环的数目呈线性增加关系. By applying the hybrid density functional theory coupled with Green's function method, we investigated the conjugation length dependence of the electron conductance by calculating the current-voltage characteristics of the molecular junctions composed of benzene derivatives. At low bias, we found a perfect exponential decay form with an exponent 0. 47 for the system.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2007年第5期952-954,共3页 Chemical Journal of Chinese Universities
基金 国家自然科学基金(批准号:90301001 10425420)资助.
关键词 电子输运 弹性散射 电子结构 结构因子 Electronic transport Elastic scatter Electronic structure Structure factor
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参考文献12

  • 1Mujica V.,Kemp M.,Ratner M.A..J.Chem.Phys.[J],1994,101:6849-6855
  • 2Tian W.,Datta S.,Hong S.,et al..J.Chem.Phys.[J],1998,109:2874-2882
  • 3Emberly E.G.,Kirczenow G..Phy.Rev.B[J],1998,58:10911-10920
  • 4Hall L.E.,Reimers J.R.,Hush N.S.,et al..J.Chem.Phy.[J],2000,112:1510-1521
  • 5Seminario J.M.,Zacarias A.G.,Tour J.M..J.Phys.Chem.A[J],1999,103:7883-7887
  • 6Wang C.K.,Fu Y.,Luo Y..Phys.Chem.Chem.Phys.[J],2001,3:5017-5023
  • 7Luo Y.,Wang C.K,Fu Y..J.Chem.Phys.[J],2002,117:10283-10287
  • 8Yaliraki S.N.,Kemp M.,Ratner M.A..J.Am.Chem.Soc.[J],1999,121:3428-3434
  • 9Yaliraki S.N.,Roitberg A.E.,Gonzalez C.,et al..J.Chem.Phys.[J],1999,111:6997-7002
  • 10Mujica V.,Roitberg A.E.,Ratner M.A..J.Chem.Phys.[J],2000,112:6834-6839

二级参考文献29

  • 1Cui X D, Primak A, Zarate X, Tomfohr J, Sankey O F, Moore A L, Moore T A, Gust D, Harris G and Lindsay S M 2001 Science 294 571
  • 2Bumm L A, Arnold J J, Cygan M T, Dunbar T D, Burgin T P,Jones II L, Allara D L, Tour J M and Weiss P S 1996 Science 2711705
  • 3Andres R P, Bielefeld J O, Henderson J I, Janes D B, Kolagunta VR, Kubiak C P, Mahoney W J and Osifchin R G 1997 Science 2731690
  • 4Chen J, Reed M A, Rawlett A M and Tour J M 1999 Science 2861550
  • 5Mujica V, Kemp M and Ratner M A 1994 J. Chem. Phys. 1016849
  • 6Tian W, Datta S, Hong S, Reifenberger R, Henderson J I and Kubiak C P 1998 J. Chem. Phys. 109 2874
  • 7Emberly E G and Kirczenow G 1998 Phys. Rev. B 58 10911
  • 8Hall L, Reimers J R, Hush N S and Silverbrook K 2000 J. Chem.Phys. 112 1510
  • 9Seminario J M, Zacarias A G andTour J M 1999 J. Phys. Chem.A 103 7883
  • 10Wang C K, Fu Y and Luo Y 2001 Phys. Chem. Chem. Phys. 35017

共引文献14

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  • 1Zhitenev N. B. , Erbe A. , Bao Z. , et al.. Nanotechnology[J], 2005, 16(4) : 495--500
  • 2Xu B. Q., Tao N. J.. Science[J], 2003, 301(5637) : 1221--1223
  • 3Fuhrer M. S. , Nygard J. , Shih L. , et al.. Science[J] , 2000, 288(5465) : 494-497
  • 4Otsuka Y., Naitoh Y., Matsumoto T., et al.. Nanotechnology[ J], 2004, 15(11 ) : 1639--1644
  • 5Bohler T. , Grebing J. , Mayer-Gindner A. , et al.. Nanotechnology [ J ] , 2004, 15 (7) : S465--S471
  • 6Park H. K., Lim A. K. L., Alivisatos A. P., et al.. Applied Physics Letters[J], 1999, 75(2) : 301--303
  • 7Xiang J. , Liu B. , Liu B., et al.. Electrochemistry Communications[J], 2006, 8(4) : 577--580
  • 8Dong X. D., Xia Y. , Zhang B. L. , et al.. Nanotechnology[J], 2007, 18(39) : 395502
  • 9Boussaad S., Tao N. J.. Applied Physics Letters[J], 2002, 80(13) : 2398--2400
  • 10Xu B. Q., He H. X., Boussaad S., et al.. Electrochimica Acta[J], 2003, 48(20--22) : 3085--3091

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