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AlN薄膜的离子反应镀工艺优化及分析 被引量:2

Technology Optimization of Reactive Ion Plating for AlN Film and Its Analysis
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摘要 利用高纯氮气和铝,采用离子反应镀的方法,在石英玻璃衬底上成功制得AlN薄膜。正交设计优化结果表明:AlN薄膜最大沉积速率达到0.81μm/min,其相应的工艺参数为:蒸发电压225V,轰击电压70V,轰击时N2气压为1.5999Pa。X-射线衍射、原子力显微镜、近红外光谱、拉曼光谱对薄膜进行了分析,证明了AlN薄膜的存在。 AlN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0.81 μm/min, its technology parameters are like this : the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is 1.2 × 10^-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AlN film's presence.
出处 《表面技术》 EI CAS CSCD 2007年第3期37-39,共3页 Surface Technology
关键词 氮化铝 薄膜 离子反应镀 工艺优化 AlN Film Reactive ion plating Technology optimization
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参考文献10

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