摘要
利用高纯氮气和铝,采用离子反应镀的方法,在石英玻璃衬底上成功制得AlN薄膜。正交设计优化结果表明:AlN薄膜最大沉积速率达到0.81μm/min,其相应的工艺参数为:蒸发电压225V,轰击电压70V,轰击时N2气压为1.5999Pa。X-射线衍射、原子力显微镜、近红外光谱、拉曼光谱对薄膜进行了分析,证明了AlN薄膜的存在。
AlN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0.81 μm/min, its technology parameters are like this : the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is 1.2 × 10^-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AlN film's presence.
出处
《表面技术》
EI
CAS
CSCD
2007年第3期37-39,共3页
Surface Technology
关键词
氮化铝
薄膜
离子反应镀
工艺优化
AlN
Film
Reactive ion plating
Technology optimization