摘要
采用低温物理沉积技术在二氧化硅衬底(SiO2/Si(100)生长出了MgxZn1-xO晶体薄膜.用原子力显微镜(AFM)测得不同衬底温度下晶体薄膜的表面平整性,根据测得的数据资料分析衬底温度对薄膜表面粗糙度的影响,发现在250℃时生长得到的MgxZn1-xO薄膜具有最好的平整性,这也和以前生长的MgxZn1-xO薄膜分析结果一致.
Abstract：MgxZn1-xO thin films were grown on SiO2/Si（100） using reactive electron beam evaporation technology at low temperature. Atomic force microscopy （AFM） measurement results showed that it was a pillar- like property to MgxZn1-xO thin films growth, and a ripening was suffered during MgxZn1-xO thin films growth with the substrate temperature higher, So MgxZn1-xO thin films growth take on good quality with the 250 ℃ temperature, this is consistent with the present analysis result.
出处
《华东交通大学学报》
2007年第2期154-157,共4页
Journal of East China Jiaotong University
基金
华东交通大学校立科研基金资助项目(No.06ZKJC05)
