摘要
提出并制作了一种全新的平面分离双栅金属氧化物半导体场效应晶体管,该器件垂直于沟道方向的电场为一非均匀场.理论计算、TCAD三维器件仿真以及实验结果均表明,通过改变该器件中任何一个栅极偏置电压,能够得到可以调节的输出特性(增益系数)及转移特性曲线,可以很方便地调节器件的阈值电压及亚阈值摆幅并具备低功耗特点.这为电路的设计及器件制作提供了更多的灵活性,既可以简化电路的设计又可以降低MOS集成电路制造工艺的复杂程度.平面分离双栅金属氧化物半导体场效应晶体管制作工艺与目前常规的CMOS工艺完全兼容.
The characteristics,experiment,and three dimensional device simulations of a new planar split dual gate （PSDG） MOSFET device are reported for the first time. Theoretical calculation and 3D simulation as well as the experimental data show that the two independent split dual gates can provide dynamical control of device characteristics such as threshold volt-age and sub-threshold swing as well as the device saturated current. The PSDG MOSFET transistor leakage current can be re-duced by as much as 78% of a traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conven-tional 0.18vtm logic process flow.
