摘要
为了降低InPDHBT的B-C之间的导带势垒,抑制电流阻挡效应,采用了一种含InGaAsP的复合式集电区结构.第一次从理论上分析了此种类型的复合式集电区各个参数对于DHBT性能的影响并给出了优化方案,为此类型的复合式集电区结构的设计提供了理论指导和设计参考.基于文中所述的理论,对文献中的数据进行了分析,得到了令人满意的结果.
A composite collector structure containing InGaAsP was designed, which can effectively eliminate the energy spike at the B-C junction and avoid the current blocking effect. The dependence of the characteristics of a DHBT on the parame-ters of the collector structure were analyzed theoretically, and an optimized result was delivered which can give a theoretical direction and reference for the design of this kind of composite collector. The data were analyzed based on the theory of this paper, and a satisfactory result was obtained.
