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前均衡CMOS光电集成接收机概念的提出和模拟

Concept and Simulation of a Novel Pre-Equalized CMOS Optoelectronic Integrated Receiver
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摘要 提出了一种解决CMOS光电集成接收机灵敏度和速度问题的新方法——前均衡法,即在接收放大电路的前端对传输信号进行频率补偿,并分别采用并联谐振回路、三次阶梯网络和高通滤波器峰化技术设计了三种前均衡0.35μmCMOS光电集成接收机.其中,光电探测器选用面积为40μm×40μm的叉指型双光电二极管结构,实验测得该二极管的频率响应带宽为1.1GHz,结电容为0.95pF.对接收机的模拟结果表明:采用三次阶梯网络峰化技术的前均衡方案可有效提高光接收机的灵敏度和速度,并可实现灵敏度为-14dBm,3dB带宽为2GHz,BER为10-12的0.35μmCMOS光电集成接收机. A novel method for enhancing the sensitivity and speed of CMOS optoelectronic integrated receivers called pre-equalization,which compensates the transferred signal at the input port of a preamplifier,is put forward. Based on 0.35μm CMOS technology,three types of pre-equalized optoelectronic integrated receivers are designed by parallel resonant loop pea-king technique,third-order ladder network peaking technique, and high-pass filter peaking technique, respectively, where a fingered dual-photodiode is applied with a 40μm×40μm area, a 1.1GHz 3dB bandwidth, and a 0.95pF junction capacitance. The simulation results indicate that the sensitivity and speed of a receiver can be enhanced effectively by adding a third-order ladder network pre-equalization circuit,which achieves a -14dBm sensitivity and a 2GHz 3dB bandwidth with a bit error rate of 10^-12.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第6期951-957,共7页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60536030 60676038) 天津市应用基础研究计划(批准号:06YFJZJC00200)资助项目~~
关键词 前均衡 CMOS 光电集成接收机 峰化技术 pre-equalization CMOS optoelectronic integrated receiver peaking technique
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参考文献20

  • 1Momtaz A, Cao J,Caresosa M, et al. A fully integrated SONET OC-48 transceiver in standard CMOS. IEEE J Solid-State Circuits,2001,36(12) : 1964
  • 2Razavi B. Prospects of CMOS technology for high-speed optical communication circuits. IEEE J Solid-state Circuits, 2002,37(9) :1135
  • 3Henrickson L,Shen D,Nellore U,et al. Low-power fully integrated 10-Gb/s SONET/SDH transceiver in 0.13-μm CMOS. IEEE J Solid-State Circuits, 2003,38 (10) : 1595
  • 4Woodward T K,Krishnamoorthy A V. 1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies. IEEE J Sel Topics Quantum Electron, 1999,5(2) : 146
  • 5Hermanst C, Leroux P, Steyaert M. Gigabit photodiodes in standard digital nanometer CMOS technologies. 33rd Conference on European Solid-State Device Research,2003:51
  • 6Rooman C, Copp6e D, Kuijk M. Asynchronous 250-Mb/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications. IEEE J Solid-State Circuits, 2000,35 (7) : 953
  • 7Zimmermann H, Heide T. A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology. IEEE Photonics Technol Lett,2001,13(7) :711
  • 8Radovanovic S,Annema A J, Nauta B. A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication. IEEE J Solid-State Circuits,2005,40(8) :1706
  • 9Morikuni J J,Kang S M. An analysis of inductive peaking in photoreceiver design. J Lightwave Technol, 1992, 10 (10) : 1426
  • 10Lu C H,Chen W Z. Bandwidth enhancement techniques for transimpedance amplifier in CMOS technologies. Proceed- ings of the 27th European of Solid-State Circuits Conference,2001 : 174

二级参考文献5

  • 1[1]Childers J E,Morris J E,Eildman E R.SPIE,1993,1849:292
  • 2[2]Woodward T K,Krishnamoorthy A V.IEEE Journal of Selected Topics in Quantum Electronics,1999,5(2):146
  • 3[3]Kuchta D M,Ainspan H A,Canora F J,et al.IBM J Res Develop,1995,39(1/2):67
  • 4[4]Yoshida Takeshi,Ohtomo Yusuke,Shimaya Masakazu,et al.IEDM1998 CD edition
  • 5[5]He Y S,Garrett L D,Lee K -H,et al.Electronics Letters,1994,30(22):1887

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