NIP型非晶硅薄膜太阳能电池的研究

Investigation on N-I-P Hydrogenated Amorphous Silicon Solar Cell

采用射频等离子体增强化学气相沉积(RF-PECVD)技术制备非晶硅(a-Si)NIP太阳能电池,其中电池的窗口层采用P型晶化硅薄膜,电池结构为Al/glass/SnO2/N(a-SiH)/I(a-SiH)/P(cryst-SiH)/ITO/Al。为了使P型晶化硅薄膜能够在a-Si表面成功生长,电池制备过程中采用了H等离子体处理a-Si表面的方法。通过调节电池P层和N层厚度和H等离子体处理a-Si表面的时间,优化了太阳能电池的制备工艺。结果表明,使用H等离子体处理a-Si表面5min,可以在a-Si表面获得高电导率的P型晶化硅薄膜,并且这种结构可以应用到电池上;当P型晶化硅层沉积时间12.5min,N层沉积12min,此种结构电池特性最好,效率达6.40%。通过调整P型晶化硅薄膜的结构特征,将能进一步改善电池的性能。

A series of N-I-P amorphous silicon solar cells is prepared by RF-PECVD,whose P-layer is made of hydrogenated crystallized silicon （cryst-Si： H）. The structure of the solar cells is Al/glass/SnO2/N（a-Si：H）/I（a-Si： H）/P（cryst-Si：H）/ ITO/Al. Hydrogen plasma treatment is adopted to ensure the growth of cry-Si： H on amorphous substrate. The performance of solar cells is opt＇nnized by adjusting the thickness of P-layer and N-layer and the time of hydrogen plasma treatment. The results show that high-quality P-type cryst-Si： H can be obtained by hydrogen plasma treatment at the interface of a-Si： H I- layer. When the deposition time of N-layer and P-layer was optimized respectively,the a-Si： H solar cell with conversion efficiency of 6. 40% is obtained. The performance of the solar cells can be improved by adjusting the structure of F-layer.