VHF—PECVD法制备微晶SiGe薄膜及太阳电池

Microcrystalline SiGe Prepared by VHF-PECVD for Thin Film Solar Cells

以Si2H6和GeF4为源气体,用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在不同衬底温度和功率条件下制备了SiGe薄膜材料。用喇曼光谱和扫描电子显微镜(SEM)对材料的结构进行了研究。结果表明薄膜结构随温度的升高、功率的增大逐渐由非晶SiGe(a-SiGe)转变为微晶SiGe(μc-SiGe)材料。将这种材料应用于μc-SiGe薄膜太阳能电池中,电池结构为玻璃/SnO2/p-μc-Si/i-μc-SiGe/n-μc-Si/Al,首次获得效率η=4.2%的μc-SiGe薄膜太阳能电池,开路电压Voc=0.335V,短路电流密度Jsc=20.16mA/cm2,填充因子FF=41.938%。

A series of silicon-germanium （μc-SiGe） thin films were prepared at different substrate temperature （Tsub） and power by using VHF-PECVD technique. The films were analyzed by micro-Raman spectroscopy and scanning electron microscope. We found that the structure of the films changed from amorphous state to microcrystalline state with the increasing of （Tsub） and power. A μc-SiGe solar cell was fabricated with this material, whose configuration was glass/SnO2/p-μc-Si： H/i-μc-SiGe： H/n-μc-Si： H/Al. The conversion efficiency of 4.2% was achieved （Voc =0. 335 V,Jac =20.16 mA/cm^2 ,FF=41. 938%）.