摘要
以硅烷为反应气体,温度为850~1100℃,在(100)取向的单晶硅片上,采用化学气相沉积法生长了一维硅纳米线.用扫描电子显微镜观察了硅纳米线的表面形貌,用X射线衍射仪研究了硅纳米线生长结构与反应温度的关系.分析了不同实验条件对硅纳米线生长结构的影响,并对一维硅纳米线与块体硅的光致发光(PL)特性进行了分析比较.
By using chemical vapor deposition (CVD) method, silicon nanowires (SiNWs) have been synthesized on single crystal silicon (100) wafers. The Sill4 gas served as a silicon source for the growth of SiNWs. The morphology of prepared SiNWs were studied by scanning electron microscopy (SEM), the growth microstructures of fabricated SiNWs were analyzed by X-ray diffraction (XRD) spectrum and selected-area electron diffraction (SAED) method. The effect of depositing temperature parameters on growth microstructure have been analyzed and discussed. The photoluminescence spectra reveal that SiNWs have a stronger light-emission than bulk silicon.
出处
《辽宁师范大学学报(自然科学版)》
CAS
北大核心
2007年第2期172-174,共3页
Journal of Liaoning Normal University:Natural Science Edition
基金
中国博士后基金会资助项目(2004036387)
辽宁省教育厅科学基金资助项目(20040203)
关键词
硅纳米线
化学气相沉积
温度
生长结构
光致发光
silicon nanowires
chemical vapor deposition
temperature
growth structure
photoluminescence