温度对硅纳米线生长结构的影响

The effect of depositing temperature on growth structure and characters of silicon nanowires

以硅烷为反应气体，温度为850～1100℃，在（100）取向的单晶硅片上，采用化学气相沉积法生长了一维硅纳米线．用扫描电子显微镜观察了硅纳米线的表面形貌，用X射线衍射仪研究了硅纳米线生长结构与反应温度的关系．分析了不同实验条件对硅纳米线生长结构的影响，并对一维硅纳米线与块体硅的光致发光（PL）特性进行了分析比较．

By using chemical vapor deposition （CVD） method, silicon nanowires （SiNWs） have been synthesized on single crystal silicon （100） wafers. The Sill4 gas served as a silicon source for the growth of SiNWs. The morphology of prepared SiNWs were studied by scanning electron microscopy （SEM）, the growth microstructures of fabricated SiNWs were analyzed by X-ray diffraction （XRD） spectrum and selected-area electron diffraction （SAED） method. The effect of depositing temperature parameters on growth microstructure have been analyzed and discussed. The photoluminescence spectra reveal that SiNWs have a stronger light-emission than bulk silicon.