硅凹槽中硅反蛋白石光子晶体直角半波导的制备

Preparation of Si Inverse Opal Orthogonal Wave-Guide Embedded in Si Flute

探索了利用PECVD方法和ICP技术制备硅凹槽中硅反蛋白石(opal)结构光子晶体直角半波导的工艺条件,研究了射频功率、气体流量、反应室压力、沉积时间等PECVD工艺条件及基底状态对填充效果的影响。结果表明,降低沉积速率有利于在蛋白石结构内外均匀填充,同时在自由基扩散通道不被堵塞的前提下,增加沉积时间及蛋白石结构的规整程度,有助于反opal结构的形成。

The methods to prepare the Si inverse opal half orthogonal wave-guide embedded in Si flute by PECVD and ICP were explored. The influences of the PECVD and substrate conditions of RF power, flow rate, pressure in reaction, depositing time on the filling effect were studied. The results indicate that low reaction rate is helpful to sediment evenly, and if the free radical diffusion channel is not closed, the increasing of depositing time and the orderly opal structure are also important in this method.