先进CMOS工艺栅极氧化膜的硅片级可靠性评价

Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process

可靠性评价的结果可直接关系到一个工艺是否能投入实际生产,也可反应出工艺中存在的问题。随着工艺更新速度的加快,硅片级可靠性(WLR)测试应运而生,其核心任务就是快速有效地评价工艺的可靠性,并对工艺进行监控。本文介绍了CMOS器件栅极氧化膜的硅片级可靠性快速评价方法以及失效机理,并给出了0.18μm CMOS工艺硅片级可靠性评价的最新研究亮点。

Reliability evaluation results can guide the process tuning, and reveal the issues.Due to the quick process generation＇ s emerging, reliability （WLR） appeared.The two main tasks of WLR are quickly to qualify the new process and monitor the process.The evaluation methods for reliability and the failure mechanism of gate oxide were introduced. Especially, the latest research highlights of O. 18 μm CMOS process WLR evaluation were shown.