ZrO_2掺杂对SnO_2薄膜电性及气敏性的影响

Effect of ZrO_2 Dopant on the Electrical and Gas Sensing Properties of SnO_2 Thin Films Prepared by the Sol-Gel Technique

本研究不用金属酸盐而以无机盐SnCl2·2H2O为主体原料;以Zr（OC3H7）4为掺杂剂;无水乙醇为溶剂，采用溶胶-疑胶（Sol－Gel）工艺制备了不同ZrO2掺杂份量的SnO2薄膜.发现ZrO2掺杂的SnO2薄膜在常温下对H2S气体具有较好的气敏性能.同时本文研究了ZrO2掺杂份量对SnO2薄膜导电率及气敏性能的影响.

SnO2(ZrO2) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl2.2H2O as main precursor, Zr(OC3H7)4 as dopant, ethanol as solvent. The effect of ZrO2 dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO2-SnO2 thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H2S at room temperature.