摘要
提出了计算非晶硅肖特基二极管伏安特性的新方法,这种方法不需知道非晶硅隙态密度具体分布就可导出其伏安特性表达式,而且与实验结果相吻合。
In this paper the author give a new way to calculate I-V characteristics of amorphous silicon Schottky diode. In the new way the real distribution of gap state density in amorphous silicon need not to be known. The I-V characteristics is deduced and in agreement with result from the experi-ment.
关键词
非晶硅
肖特基二极管
伏安特性
amorphous silicon, Schottky diode, I-V characteristics
