摘要
采用数值模型成功地实现了薄膜深亚微米SOIMOSFET的瞬态数值模拟．为了提高模拟软件的计算效率和收敛速度，采用交替方向格式对载流子连续方程进行数值求解，得到了较为理想的模拟结果．通过大量的模拟计算，较为详细地分析了薄膜深亚微米全耗尽SOIMOSFET的瞬态工作机理，为今后小尺寸CMOS／SOIVLSI电路的设计提供了理论基础．
The transient two-dimensional simulator of thin-film deep submicron SOIMOS-FET is developed by using numerical model. In order to raise calculating efficiency andspeel of convergence, a new scheme, alternating direction scheme, is used to solve thecontinuity equations. By using the simulator, two dimensional transient characteristics canbe obtained and discussed. lt is confirmed that present simulator is effective for accuratecalculation of transient performance and for optimum deep submicron SOI devices. Thesimulator layies the foundation of CMOS/SOI VLSI design.
关键词
VLSI
SOI
MOSFET
瞬态数值模拟
Computer simulation
Films
Numerical methods
Silicon on insulator technology
ULSI circuits
