不同制备工艺对SIMOX结构应力的影响

Effects of Different Fabrication Processes on Stress of SIMOX Structure

对不同制备工艺的SIMOX样品，用Raman散射法作了应力测量和比较．结果显示，在1300℃、6小时的退火条件下，整片单次注入／退火与三次注入／退火对样品的应力无明显影响，正面张应力都≤5×103N／cm2．且均匀分布，背面无应力．N2、N2＋1％O2、Ar＋0．5％O2等不同退火气氛对应力也无明显影响．局部注入会在SIMOX样品的顶层硅中产生较高的应力，且在高温长时间退火后背面衬底中还有应力存在．

The stress of SIMOX samples fabricated by different processes is compared byRaman scattering measurements. The results show that single implantation/annealing andthree times implantation/annealing do not evidently affect the stress of SlMOX structuresannealed at 1300℃ for 6h. The tensile stress densities are uniform and all≤5×103N/cm2;Different annealing atmospheres, such as N2. N2+1%O2. Ar+0. 5 %O2 do not evidentlyaffect the stress of SIMOX sample as well; Higher stress density (up to 1. 25×104N/cm2) iscreated by part area implantation at the top layer of the SIMOX structure and the stressstill remains in the back of the silicon substrate, even after annealing at high temperaturefor long time.