摘要
本文运用半导体能带理论探讨了硅衬底上铁电薄膜的异质结效应的物理模型．对用sol－gel工艺制备的PZT／Si结构的极化特性、开关特性和I－V特性的实验研究证实了这种效应．
This paper presents a physical model of the heterojunction effect of ferroelectric film on silicon substrate in view of energy band in semiconductor. The polarization property, switching behavior and current-voltage (I-V) charateristics of sol-gel derived PZT/Si structure demonstrate the effect.
基金
国家863高科技计划资助
关键词
硅衬底
铁电薄膜
异质结效应
Electric properties
Ferroelectric materials
Semiconducting films
Semiconducting silicon
