摘要
报道了射频反应溅射制备的CdIn2O4薄膜（简称CIO膜）的光学、电学性质以及能带结构与退火处理的关系，包括透射率、折射率、消光系数和薄膜载流于浓度的讨论．研究发现退火处理能引起CIO薄膜透射率、光隙能的增加以及折射率、消光系数的减小，并且使膜的短波吸收边“蓝移”．另外还能明显地提高膜的电导率．文中根据退火处理引起氧空位增加、电子陷阱减小等效应以及薄膜的能带结构和晶格拓展的理论分析讨论了实验所得结果．
We report on the optical properties of CdIn2O4 thin films prepared by RF reactive sputtering from Cd-In alloy target in an Ar+O2 reactive gas mixture as a function of annealing, including the discussions of optical transmittance T, refractive index nf, extinction coefficient k and optical gap energy Eopt Expermental results show that the transmittance T and optical gap energy Eopt are increased after annealing, while the refractive index n and extinction coefficient k are decreased. These results can be explained by the theories of lattice contraction, the changes in the defect concentration and the energy band structure after annealing treatment.
