摘要
采用射频等离子体化学气相沉积技术合成氮化碳薄膜,测量其X射线光电子能谱(XPS),获得两组C(1s)电子和N(1s)电子结合能,它们是E(C1)=398.0~398.7eV,E(C2)=284.6~284.8eV;E(N1)=398.0~398.7eV,E(N2)=400.0~400.9eV。证实了薄膜中碳原子存在sp3杂化轨道成键和sp2杂化轨道成键两种键合形式。该方法合成的氮化碳薄膜含氮量在12.0~53.7%,含氮量随沉积时氮气流量的增大而增大。
The carbon nitride films have been deposited by RF CVD and investigated with X ray photoelectron spectroscopy. The result indicates that there are two couples of binding energies for C (1s) and N(1s). It is suggested that carbon atoms are bonded to nitrogen atoms with sp 2 and sp 3 structures. The N content of the films prepared by RF CVD is in the range of 12.0~53.7%,and rises with the increase of N 2 flow rate during the depositing.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第1期93-95,共3页
Journal of Functional Materials
基金
国家自然科学基金
关键词
氮化碳
XPS
薄膜
超硬材料
carbon nitride,X ray photoelectron spctroscopy,superhard materials.