CeO_2:Eu^(3+)薄膜的制备及其发光性能研究

Preparation and Photoluminescence of CeO_2:Eu^(3+) Films

采用Pechini法制备Eu3+掺杂的CeO2:Eu3+薄膜.利用X射线衍射(XRD)﹑原子力显微镜(AFM)和光致荧光光谱(PL)对样品进行表征.结果表明:薄膜样品在700℃就结晶成纯面心立方萤石结构的多晶薄膜;PL激发谱中,300～360 nm的宽带激发峰起源于基质CeO2的吸收.

CeO2： Eu^3＋ phosphor films with various Eu^3＋ concentrations were prepared by the Peehini method. X-ray diffraetion（XRD）, atomic force mieroseopy（AFM） and Photolumines- eenee（PL） measurements were used to characterize the samples. XRD analysis shows that the films with pure cubic-fluorite structure is obtained at the sintered temperature 700 ℃. The PL excitation band at 300-360 nm is due to the charge transfer from O2^- to Ce^4＋ and subsequent energy transfer to Eu^3＋ in the films.