SiC/Si异质生长的研究

Research on the growth of SiC/Si heterostructure

在半导体材料中，ＳｉＣ比Ｓｉ具有更优越的物理特性、化学特性和半导体特性，在高温、高频和功率器件制造中有十分广阔的应用前景．但是它的材料制备很困难．文中在理论分析基础上，以Ｓｉ为衬底，用常压化学气相淀积（ＡＰＣＶＤ）技术，在温度为１１００℃下，生长出ＳｉＣ多晶薄膜。

Among semiconductor materials, SiC is superior to Si in physical, chemical and semiconductive properties. SiC has a very bright application prospect for the fabrication of high temperature, high frequency and power devices, but it is difficult to prepare. This paper shows that, based on the theoretical analysis, SiC films have been grown on silicon substrates at the temperature as low as 1 100℃ by the method of atmospheric pressure chemical vapor deposition ( APCVD ) and the samples have been measured and analysed by AES and X ray diffraction.