摘要
The speed performance and static power dissipation of the ultra-thin-body （UTB） MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width （Lsp） and silicon film thickness （tsi） are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator （SOI） MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.
The speed performance and static power dissipation of the ultra-thin-body （UTB） MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width （Lsp） and silicon film thickness （tsi） are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator （SOI） MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.
基金
Project supported by the National Natural Science Foundation of China （Grant No 60625403）, the State Key Development Program for Basic Research of China （Grant No 2006CB302701）.
