摘要
本文通过MOCVDGaInP的生长速率，组分In的气相分配比与生长温度的关系，较强细地对GaInP生长过程中的热力学进行了研究，并研究了低温GaInP缓冲层对高温GaInP外延生长的影响，根据GaInP的组分．随生长温度的变化关系，生长出质量较好的短波长Ga0.65In0.35P材料．
Thermodynamics and characterization of GaInP grown by MOCVD have been studied in detail. The low-temperature-growth GaInP buffer layer is employed to help to control the composition of GaInP at higher temperature. On the above studies, the higherquality Ga0.65In0.35P pitaxial layers are grown on GaAs substrates.
关键词
MOCVD
外延生长
半导体材料
热力学
Metallorganic chemical vapor deposition
Semiconducting gallium compounds
Semiconducting indium compounds
Thermodynamics
