摘要
利用红外光谱、光致发光光谱与Hall测量等手段，对Fe掺杂Hg1-xCdxTe体单晶样品进行实验，研究了Fe在Hg1-xCdxTe中的杂质行为，发现Fe掺杂在Hg1－xCdxTe中引入一个位于导带底下方约80meV的施主能级，并且发现掺杂HgCdTe中的Fe元素在低于180K温度下基本上不表现出电活性，但它能够起非辐射复合中心的作用，影响材料的非平衡载流子寿命，在积分光致发光强度的温度变化关系中明显地反映出来．
The investigation on Fe doped Hg1-xCdxTe samples has been performed by infrared transmission spectroscopy, photoluminescence spectroscopy and Hall measurements. The Fe impurity behavior doped in Hg1-xCdxTe has been studied, a donor level which is about 80meV below the bottom of the conduction band was discovered. Exhibiting no electrical activity, the Fe doped in Hg1-xCdxTe can influence the non-equilibrium carrier lifetime by acting as the non-radiative combination center, which can be discovered through the temperature dependence of integrated photoluminescence intensity.
