磁控溅射制备ZnO薄膜及其声表面波特性

Surface acoustic wave properties of ZnO films grown by magnetron sputtering

通过射频磁控溅射技术在GaAs,Au/GaAs,Si和玻璃基片上成功制备了ZnO多晶薄膜,利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征,结果表明ZnO薄膜呈完全c轴取向,Au缓冲层可以有效地改善ZnO薄膜的晶体质量,X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°,同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响,通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测,利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量.

In this letter we report the fabrication and structural properties of ZnO thin films grown on GaAs, Au/GaAs, Si and glass substrates by rf magnetron sputtering. The x-ray diffraction data indicated that all the ZnO films were pure c-axis oriented and the rocking curves showed that the full-width at half maximum （FWHM） of ZnO（002） peak of ZnO/Au/GaAs films is as small as 2.41°. The SEM images showed better surface for the ZnO films grown with Au buffer. The surface acoustic wave properties of IDT/ZnO/GaAs filter were measured by HP8753C network analyzer. The results indicated that the insertion loss is only 10.4 dB and the electric efficiency can be up to 84.1% using the 5.6 um-wavelength IDT.