横向外延过生长磷化铟材料的生长速率模型

Growth rate model of InP epitaxial lateral overgrowth

分别考虑气相扩散和掩膜表面扩散过程,建立了金属有机化学气相沉积条件下横向外延过生长的速率模型.在砷化镓衬底上外延磷化铟条件下,模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系.通过讨论掩膜/窗口宽度的影响,说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素.以上结论与实验结果一致.

Theoretical expressions of the epitaxial lateral overgrowth rate in the metalorganic chemical vapor deposition （MOCVD） have been formulated in this paper, with respect to two separate processes： vapor phase diffusion and mask surface diffusion. In the case of InP deposition on GaAs substrate, a parametric study was accomplished in order to determine the impact of the mask/ window width to the growth rate. The model, which uses a new parameter ＂effective mask length＂ Lmask, reveals that the key factors determining the growth rate are mask/window width and mask width/effective mask length. This model can be used as a tool for predict the growth conditions leading to expected growth rate.