摘要
本文提出了一种新的提高多晶硅发射极晶体管和电路速度的方法，通过对器件外基区下对应的外延层区域进行离子补偿注入，降低相应外延层中的净掺杂浓度，有效地减小了外基区－集电区单位面积的集电结电容，有利于器件和电路速度的提高．由于内基区下对应的外延层浓度不变，对器件的直流特性无不良影响．本文给出了补偿注入研究结果和器件特性．
A new method to improve the speed of polysilicon emitter transistors and circuits has been proposed in this paper. By compensative ion-implantation in the epitaxial area under extrinsic base, we have decreased the net doping concentration of this epitaxial area, thus reduced the B-C junction capacitance and collector R-C charge and discharge time. The epitaxy doping concentration under intrinsic base is unchanged, so the DC characteristics of polysilicon emitter transistors is unaffected. The investigation results of compensative ion implantation and device characteristics have also been presented.
