缓冲层厚度对Ti/Si模板上生长ZnO薄膜的影响

Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Grown on Ti/Si(111) Templats by AP-MOCVD

采用常压MOCVD法,以二乙基锌和去离子水为源,在不同厚度的ZnO缓冲层上生长了一组ZnO薄膜。分别采用X射线衍射(XRD)、干涉显微镜和光致发光谱(PL)对样品的结晶性能、表面形貌和发光性能进行分析,结果表明,随着缓冲层的引入,ZnO外延膜的质量得到很大提高,缓冲层的厚度对外延ZnO薄膜的质量有很大的影响,当缓冲层厚度为60 nm时,ZnO薄膜的结晶性能最好,表现出高度的择优取向,(002)面的ω摇摆曲线半峰全宽仅为1.72°,其表面平整,表现出二维生长的趋势,室温光致发光谱中只有与自由激子复合有关的近紫外发光峰,几乎观察不到与缺陷有关的深能级发光。

A series of ZnO films were deposited on Ti/Si （ 111 ） templates having different buffer layer thicknesses by atmospheric - pressure Metalorganic chemical vapor deposition （ AP - MOCVD）. The effects of ZnO buffer layer on crystallography, surface morphology and lumination properties of ZnO films were investigated using X - ray diffraction （XRD）, interference microscopy and photoluminescence （PL） spectrum, respectively. It was found that the quality of ZnO films could be greatly improved by introducing ZnO buffer layer. Meanwhile, the surface morphology, structural and optical properties of ZnO films depended on the thickness of the buffer layer. The ZnO film grown on 60 nm thick ZnO buffer layer shows a fiat surface,good structural and optical properties.