摘要
采用溶胶-凝胶法制备了SrBi4-xCexTi4O15（x=0.2~0.8）铁电陶瓷,X-射线衍射证实随着x掺杂量的增加,晶粒中a、b轴取向的晶粒逐渐增多,与扫描电镜的分析结果一致。介温谱表明样品的居里温度最大为590℃,通过研究铁电性发现,剩余极化和矫顽场先增大后减少,当x=0.6时它们分别达最大值为3.56μC/cm^2和9.38 kV/cm,这是氧空位与晶格畸变共同作用的结果。
Bismuth-layered compound SrBi4-x CexTi4O15 ferroelectric ceramics samples were prepared by Sol-Gel method. The influence of Ce content on the microstructure and ferroelectric properties of SrBi4 Ti4 O15 ceramics were systematically studied. Their microstructure was analyzed by X-ray diffraction; it shows that pure bismuth-layered perovskite phase was formed. The results of the analysis indicated that SrBi1.4 Ce0.6 Ti4 O15 （x= 0.6） sample has better ferroelectric properties with remnant polarization （Pr） of 3.56μC/cm^2 , coercive field （Ec） of 93.8 kV/cm. The highest Curie temperature was 590℃. That can be attributed to the effects of structure distortion and the high concentration oxygen vacancies in the materials during the phase transition.
出处
《压电与声光》
CSCD
北大核心
2007年第3期315-317,共3页
Piezoelectrics & Acoustooptics
基金
国家重大研究计划基金资助项目(90207025)
山东教育厅基金资助项目(03A02)
关键词
铋层
铁电性能
晶格畸变
bismuth-layered
ferroelectric
structure distortion
