水热法制备压电双晶片的研究

Study on Piezoelectric Bimorphs Using PZT Thin Films Deposited by Hydrothermal Method

用水热合成法在金属基板上制备了压电双晶片,该法简单,成本低。为了更好地研究双晶片的特性,利用扫描电镜(SEM)和X-射线衍射(XRD)技术,对PZT薄膜的特性进行了较为详细的研究。发现PZT薄膜由平均尺寸约为5μm的PZT晶粒组成,其物相组成成分PbTiO3和PbZrO3的比值约为53/47,处在准同型相界附近。根据试验中测得数据,计算出了薄膜的平均密度;并建立了双晶片位移驱动模型,由该模型得到压电系数d31,并研究了双晶片的铁电性。

Piezoelectric bimorph fabricated by hydrothermal method is presented in the paper. In order to describe the characteristics of piezoelectric bimorph, properties of PZT film are studied by SEM and XRD. Cubic particles with average size of 5μm are found and the ratio of PbTiO3/PbZrO3 in PZT is about 53/47, which is around morphotropic phase boundary （MPB）; Density is figured out through the datum measured in experiments. The model used to analyze the driving ability of bimorph, which is taken into account the effect of elastic intermediate layer, is set up. Piezoelectric coefficient d3l of PZT film is worked out using this model. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.